FM25L04-GA 4Kb Serial F-RAM Qualified to +125C Aut

 全球领先的非易失性铁电随机存取存储器 (F-RAM) 和集成半导体产品开发商及供应商Ramtron宣布扩大其应用于汽车设备+125C运行温度的铁电存储器产线--FM25L04-GA(容量:4KB，工作电压:3V, 带串行接口)，其规格达到了AEC-Q100一级，能在汽车温度范围(-40C 至 +125C)下工作，而且在极端温度下仍能保留数据长达9,000小时。

先进传动系统的设计已经采用FM25L04-GA，利用铁电存储(F-RAM)迅速、频繁地记录数据，因此变速箱可以根据驾驶者的行为和路况不断地进行自我调整。F-RAM的无延迟写入、几乎无限的使用寿命以及高速SPI接口等特性，实现了以最大的总线速度进行非常可靠的数据写入，以应用于各方面先进的汽车应用。

Ramtron战略营销经理Duncan Bennett评论道：“Ramtron的铁电存储器F-RAM已经成为智能汽车应用-出租车和引擎方面的主流存储器技术；我们正在扩大一级汽车零部件产线，以适应世界各地汽车制造商新的要求。

关于FM25L04-GA

FM25L04-GA是一种4KB非易失性存储器，采用工业级标准的串行接口(SPI)，加强了F-RAM的高速写入能力。此产品有着快速写入，无限次读/写以及低操作电流等特点，可以直接替代EEPROM。FM25L04-GA能以高达10MhHz的总线速度进行读写操作，并且具有先进的写入保护设计以防止意外的写操作和数据损坏。此产品工作电压为3伏特，可以在高达+125C温度下保留数据达9,000小时或在+55C的温度下保留数据达17年。FM25L04-GA现已供货，并采用绿色8引脚SOIC封装。

Put F-RAM memory to work in your next automotive system design

Ramtron supports demanding automotive system applications. We are committed to:

• Zero Defects
• Perpetual High Quality and High Reliability
• Ongoing Grade 1 and Grade 3 AEC-Q100 Qualifications

F-RAM is the iron-clad nonvolatile memory behind sophisticated sensor-based automotive electronics systems, selected by top safety and infotainment system designers worldwide:

AEC-Q100-Qualified

Select 64Kb, 16Kb, and 4Kb serial memory products have been Grade 1 and Grade 3 AEC-Q100-qualified, with more products in our automotive portfolio currently being qualified.

Under the Hood
The FM25L04-GA is now qualified to operate at +125 degrees Celsius and guaranteed to retain data for 9,000 hours at that extreme temperature. Additional Grade 1 F-RAM products are being qualified to serve an increasing array of under-the-hood automotive applications.

F-RAM: Superior nonvolatile memory for automotive data storage applications

The need for versatile nonvolatile memory in automotive applications is a growing phenomenon. Automotive electronic content has mushroomed with the widespread use of microcontrollers and sensors, which is driving the need for better data handling and storage in automotive sub-systems. F-RAM is a superior nonvolatile memory solution for these high-content automotive applications.

F-RAM Benefits

F-RAM has three major benefits over other nonvolatile memory choices: fast write speed, high write endurance and low power consumption.

• Fast writes: F-RAM collects and stores data more frequently than other nonvolatile memories, lowering system costs and simplifying designs. Fast writes is also a key feature when capturing sensor data, especially in noisy automotive environments or when power may suddenly fail. And F-RAM NoDelay™ writes facilitates the collection of more data at higher frequencies, allowing intelligent automotive applications to act on the timeliest information available.
• High endurance: F-RAM’s high endurance enables designers to capture information as often as they wish without the risk of wearing out the memory. Most systems have been designed around the write endurance limitations of EEPROM but are now outgrowing these limits; this is when F-RAM fills the gap.
• Low power: F-RAM consumes less power in applications with low power budgets, such as car entertainment systems.